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Author: Asif Anwar
Publication Date: 2月 27 2015
Pages: 8
Report Type: Insight, Word

Can Latecomer Freescale Compete Against the Incumbents in the GaN RF Market?

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Report Summary:

Freescale started to reemphasize an agnostic approach to providing RF solutions in 2012 when it announced the company’s first GaN-based RF power device, while maintaining the view that LDMOS continued to represent the most cost effective solution. In 2013, the company announced a commitment to support the US military sector with plans for an entirely new GaN RF power transistor product line representing one of the foundations for this effort leveraging the wide bandwidth and efficiency capabilities offered by GaN RF technology. The MMRF5014H GaN-on-SiC transistor was introduced with an emphasis on wideband performance as the company seeks to carve out a position for itself in the defense sector, complemented by an existing portfolio of LDMOS RF power transistor and GaAs MMIC products. The company has made a good start but has got a long way to go before being able to compete against competitors who have focused on the GaN defense and broader commercial market for considerably longer and have established a significant lead.

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