Powertrain_Body_Chasis&Safety 动力总成、车身、底盘及安全

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Author: Asif Anwar
Publication Date: 11月 09 2020
Pages: 9
 Report Type: Insight, Word

相关的数据可视化界面

动力总成、车身、底盘及安全

TI puts Si brains behind GaN brawn for High Voltage xEV Applications



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Report Summary:

Wide-bandgap semiconductor technologies like GaN inherently bring firmly established capabilities to power electronics, especially for high voltage systems. Texas Instruments leverages over a decade of investment and development to deliver a uniquely holistic approach – combining internal GaN-on-Si device production and packaging with optimized Si driver technology to successfully implement GaN in new applications.

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