Author: Eric Higham


Publication Date: Dec 05 2014


Pages: 44


Report Type: Report, Word



 Advanced Semiconductors

Compound Semiconductor Industry Review July - September 2014: Microelectronics




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Report Summary:

Based on financial results, the trend in the microelectronics industry is toward another year of good revenue growth in 2014. Consolidation and re-positioning activities continue in the industry as Microsemi announced two acquisitions, Fujitsu Semiconductor and Panasonic announced they would form a fabless company and Infineon acquired International Rectifier. On the product side, DOCSIS 3.1 and CMOS device development is continuing strongly.

Table of Contents

  • 1 Executive Summary
  • 2 Introduction
  • 3 MMICs
    • 3.1 Company Results
      • 3.1.1 Skyworks Reports Q3 FY `14 Financials
      • 3.1.2 Fairchild Reports Q2 FY 2014 Results
      • 3.1.3 TriQuint Reports Q2 FY 2014 Financials
      • 3.1.4 RFMD Reports Q1 FY '15 Financials
      • 3.1.5 Northrop Grumman Reports Q2 FY 2014 Financials
      • 3.1.6 Mitsubishi Electric Reports Q1 FY 2015 Financials
      • 3.1.7 Anadigics Reports Q2 FY `14 Financials
      • 3.1.8 Analog Devices Reports Q3 FY `14 Financials
    • 3.2 Contracts
      • 3.2.1 Skyworks Powers NETGEAR 802.11ac Wi-Fi Router
      • 3.2.2 Massachusetts DoT Awards Raytheon with Electronic Tolling Contract
      • 3.2.3 Skyworks Enables Wireless Automotive Platforms
      • 3.2.4 ANADIGICS FEICs Enable Wi-Fi Connectivity in the LG G3 Beat
      • 3.2.5 Ruckus Wireless Chooses TriQuint WLAN Modules
      • 3.2.6 Nextivity Selects ANADIGICS Small-Cell Power Amplifiers
      • 3.2.7 AFLCMC Awards TriQuint Engineering Services Contract
    • 3.3 New Products
      • 3.3.1 M/A-COM Launches L-Band SMT Limiter
      • 3.3.2 BeRex Announces MESFET Family
      • 3.3.3 Custom MMIC Launches 50 GHz Distributed LNA
      • 3.3.4 Richardson RFPD Offers 2.5W PA Modules from TriQuint
      • 3.3.5 M/A-COM Launches 5W X-Band Power Amplifier
      • 3.3.6 OMMIC Launches 6-bit C-band Core Chip
      • 3.3.7 API Develops High-rel, Customizable 2-20 GHz Broadband Amplifier
      • 3.3.8 M/A-COM Develops 650W L-Band Radar Transistor
      • 3.3.9 Custom MMIC Announces Driver Amplifier
      • 3.3.10 Fairview Introduces Attenuator Family
      • 3.3.11 Richardson RFPD Announces MMIC Devices from Microsemi
      • 3.3.12 Richardson RFPD Announces E-band Power Amplifier from M/A-COM
      • 3.3.13 Custom MMIC Adds 14 - 18 GHz GaN Power Amp
      • 3.3.14 Pasternack Launches PIN Diode RF Switches
      • 3.3.15 M/A-COM Develops 15W GaN-on-SiC Pulsed Power Transistor
      • 3.3.16 Richardson RFPD Announces Power Splitter from M/A-COM
      • 3.3.17 Custom MMIC Launches Ka-band GaN PA
      • 3.3.18 Custom MMIC Develops 6 - 16 GHz Driver Amplifier
      • 3.3.19 RFMD Expands GaN Product Portfolio to Support DOCSIS 3.1
      • 3.3.20 ANADIGICS Introduces GaN Line Amplifiers
      • 3.3.21 ANADIGICS Expands DOCSIS 3.1 CATV Infrastructure Portfolio
      • 3.3.22 M/A-COM Develops Up-Converter for Point-to-Point Radio Applications
      • 3.3.23 M/A-COM Launches GaN S-band High-Power Pallet & Hybrid Amplifiers
      • 3.3.24 UMS Announces 2-22 GHz Distributed LNA
    • 3.4 Other
      • 3.4.1 Soitec Claims Widespread Adoption of eSI Substrates
      • 3.4.2 Raytheon Demonstrates AESA/GaN Technologies in Patriot Radar
      • 3.4.3 Analog Devices Completes Tender Offer for Hittite Microwave
      • 3.4.4 Peregrine Semiconductor and RFMD Settle All Outstanding Litigation
      • 3.4.5 Raytheon Completes Air & Missile Defense Radar Reviews
      • 3.4.6 TriQuint Becomes the First Manufacturer to Achieve MRL 9 for GaN
      • 3.4.7 Analog Devices Completes Acquisition of Hittite
      • 3.4.8 Compound Photonics to Double Staff at UK GaAs Fab
      • 3.4.9 Cree Process Design Kit for GaN-on-SiC Technology
      • 3.4.10 Aeroflex Holding Stockholders Approve Merger Agreement with Cobham
      • 3.4.11 Northrop Grumman Selected by DARPA to Develop AESA Technology
      • 3.4.12 Microsemi to Acquire Centellax
      • 3.4.13 The Merger of RFMD & TriQuint to be Called QorvoTM
      • 3.4.14 Board Member Resigns from Microsemi
  • 4 POWER DEVICES
    • 4.1 Company Results
      • 4.1.1 International Rectifier Reports Q4 & Full Year FY 2014 Results
    • 4.2 New Products
      • 4.2.1 International Rectifier Expands Power MOSFET Offering
      • 4.2.2 M/A-COM Expands GaN Portfolio with 90W Avionics Power Module
      • 4.2.3 EPC Announces Wireless Power Transfer Demo Kit
      • 4.2.4 Mitsubishi Electric Launches DIPPFC Module
      • 4.2.5 Richardson RFPD Introduces 650V, 20A SiC Schottky Diode from Cree
      • 4.2.6 Aethercomm Introduces Rackmount Solid-State Power Amplifier
      • 4.2.7 Richardson RFPD Adds Microsemi 650V NPT IGBTs
      • 4.2.8 Cree Introduces 1.7kV, All-SiC Power Module
      • 4.2.9 EPC Develops Monolithic eGaN Transistor Half-Bridge
      • 4.2.10 ON Semiconductor & Transphorm Partner on GaN Power Systems
      • 4.2.11 EPC Develops 300V GaN Power Transistors
    • 4.3 Other
      • 4.3.1 GE to Head New York Power Electronics Manufacturing Consortium
      • 4.3.2 Advantech GaN-based HPAs Power 4K Ultra HDTV Transmission
      • 4.3.3 TSMC Patent Application Published On Compound Device with GaN Structures
      • 4.3.4 Raytheon to Provide Power Systems Expertise for Future Electric Aircraft
      • 4.3.5 Infineon buys International Rectifier for $3B
      • 4.3.6 Fairchild Realigns Global Manufacturing Capabilities
      • 4.3.7 Toshiba Announces Discrete Products Strategy
      • 4.3.8 TSI Semiconductors Completes Spin-Off of TF Semiconductor Solutions
      • 4.3.9 Raytheon Awarded US Patent for Columnar Nitride Device
      • 4.3.10 Changelight to Expand InGaN LED Epiwafer Production
      • 4.3.11 Anvil Semiconductors to use Norstel for 3C SiC-on-Si Production
      • 4.3.12 Cree SiC MOSFETs Help Power Japan's Growing Solar Energy Infrastructure
      • 4.3.13 Norstel & Ascatron to Provide Complete Offering in SiC Epitaxy
      • 4.3.14 Comtech Xicom Technology Receives SSPA Contract
      • 4.3.15 Toshiba Delivers Propulsion System Containing SiC Diodes
      • 4.3.16 SDK Increases 6" SiC Epiwafers Capacity
  • 5 Silicon Devices
    • 5.1 Company Results
      • 5.1.1 TSMC Reports Q2 FY `14 Financials
      • 5.1.2 Peregrine Semiconductor Reports Q2 FY 2013 Financials
      • 5.1.3 TSMC Reports Q2 FY `14 Financials
    • 5.2 New Products
      • 5.2.1 FinScale Announces Quantum FinFET
      • 5.2.2 RFaxis Ramping Production of CMOS RFeIC
      • 5.2.3 Peregrine Develops Switches for Wireless Infrastructure
      • 5.2.4 RFaxis Develops Family of RF Front-Ends for IEEE 802.11ac
      • 5.2.5 API Technologies Releases 2-20 GHz Amplifier
      • 5.2.6 TMD Technologies Announces Modular Microwave Power Modules
      • 5.2.7 Microchip Introduces 2.4 GHz Power Amplifier
      • 5.2.8 Peregrine Improves Wi-Fi Switch Performance
      • 5.2.9 RFaxis Offers Entire CMOS RFeICs Portfolio as Bare Die
      • 5.2.10 Richardson RFPD Adds 75 Ohm Reverse Path VGA from M/A-COM
      • 5.2.11 Peregrine Introduces 18 GHz UltraCMOS RF Switches
    • 5.3 Other
      • 5.3.1 TowerJazz to Establish New Sales and Support Office in Kyoto, Japan
      • 5.3.2 Crossbar Unveils Technical Innovation behind Terabyte Storage-On-A-Chip
      • 5.3.3 DARPA Demonstrates Millimeter Wave System on a Silicon Chip
      • 5.3.4 Tsinghua Unigroup Closes Acquisition of RDA Microelectronics
      • 5.3.5 Microsemi Acquires Mingoa
      • 5.3.6 Fujitsu and Panasonic to Establish New Fabless Company
      • 5.3.7 Intel to Buy LSI Axxia Networking Business from Avago
      • 5.3.8 Murata to Acquire All of Peregrine Semiconductor
      • 5.3.9 GigOptix Appoints Senior Director of CMOS Engineering
      • 5.3.10 TowerJazz Qualifies an Additional Factory for RF Front-End Modules
      • 5.3.11 Freescale Celebrates First Anniversary of its Discovery Lab
      • 5.3.12 OmniTek Chooses M/A-COM 12G-SDI Chipset
      • 5.3.13 TowerJazz Partners with Etesian Semiconductor
      • 5.3.14 Global Invacom Chooses TowerJazz's SiGe BiCMOS Technology

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