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Advanced Semiconductor Applications
Topics
  • RF, microwave and millimeter wave
  • Fiber optic analog
  • Optoelectronics
  • GaAs, silicon, GaN, InP, SiGe, SiC
  • Wireless, broadband, communications and connectivity
  • Commercial and military
  • Semiconductors, materials, MMICs, packaged components and sub-systems


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  • Segmentation
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  • Market Opportunities


Business Solutions
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  • Regional Forecast
  • Viewpoints
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Strategy Analytics

Compound Semiconductor Industry Review June 2011: Microelectronics

Author: Eric Higham

Publication Date: Aug 19 2011

Pages: 26

Report Type: Report, Word


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Summary

Product introductions drive June highlights for the Microelectronics portion of the compound semiconductor industry. Based on these product announcements, GaN activity is growing strongly and GaAs product development efforts continue to focus on opportunities outside the handset market. Despite, or perhaps because of the increase in GaN activity, LDMOS development continues to advance.

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Table of Contents

  • 1 Executive Summary
  • 2 Introduction
  • 3 MMICs
    • 3.1 Contracts
      • 3.1.1 ANADIGICS Announces Shipments of Multi-Band PA to Qualcomm
      • 3.1.2 Samsung's Droid Charge to use ANADIGICS' Dual-Band PA
    • 3.2 New Product
      • 3.2.1 RFMD Showcases Products for a Broad Range of Market Applications
      • 3.2.2 EPC Introduces 200V eGaN Power Transistor
      • 3.2.3 Avago Announces WiMAX Coexistence Front End Module
      • 3.2.4 RFMD Releases Voltage Controlled Attenuators
      • 3.2.5 Cree Introduces C-Band GaN HEMT MMIC Amplifier for Satellite Applications
      • 3.2.6 Cree Develops GaN HEMTs and MMICs for S-Band Radar
      • 3.2.7 RFMD Expands Product Portfolio with MMIC VCOs
      • 3.2.8 Fujitsu Presents a 6-18 GHz GaN HEMT T/R Module
      • 3.2.9 Microsemi Expands GaN-on-SiC Power Transistors for S-band
      • 3.2.10 M/A-COM Technology Solutions Introduces GaN Products
      • 3.2.11 Skyworks Introduces Low Power LNA
      • 3.2.12 Toshiba Announces Ku-Band Satcom GaN HEMT PA
      • 3.2.13 Analog Devices Introduces Integrated Driver Amplifiers
      • 3.2.14 Agilent Technologies Develops High Frequency Electromechanical Switches
      • 3.2.15 TriQuint Releases Two Amplifiers
      • 3.2.16 Avago Expands LNA Product Offering for Base Station Applications
      • 3.2.17 Hittite Featured 33 New Products at IMS 2011
      • 3.2.18 Nitronex Develops 5W GaN MMIC PA
      • 3.2.19 RFMD Expands Product Offerings for Cellular Backhaul Market
      • 3.2.20 OMMIC Launches MMICs for a Variety of Applications
      • 3.2.21 ANADIGICS Expands PA Family for Small Cell Wireless Infrastructure
      • 3.2.22 RFMD Develops ZigBee Compliant Front End Modules
      • 3.2.23 Integra Develops High Voltage GaN-on-SiC Devices in S-Band
      • 3.2.24 Integra Announces GaN-on-SiC Transistor for L-band Avionics
      • 3.2.25 Integra Announces GaN on SiC for Military Communications Applications
      • 3.2.26 Skyworks Expands Portfolio with Power Detectors
      • 3.2.27 Renesas Electronics Develops GaN PA Module for CATV Applications
    • 3.3 Other
      • 3.3.1 Microsemi Acquires AML
      • 3.3.2 RFMD Exceeds 2M MCM Shipments for 3G Wireless Transceiver Applications
      • 3.3.3 Cree Shipments of GaN on SiC Power Devices Exceeds 10MW
      • 3.3.4 RFMD Qualifies GaN Power Process for 65V Operation
      • 3.3.5 TriQuint Announces GaN Developments
      • 3.3.6 OMMIC Design Kits Offer Support for Agilent Software
      • 3.3.7 Skyworks Closes Acquisition of SiGe Semiconductor
      • 3.3.8 US Department of Defense Funds Research for Terahertz GaN Devices
      • 3.3.9 UMS Expands EM Analysis Support with Agilent Software
      • 3.3.10 GigOptix Completes Acquisition of Endwave
      • 3.3.11 Custom MMIC Design Services Wins SBIR Contract
    • 3.4 Patents
  • 4 Silicon Devices
    • 4.1 New Product
      • 4.1.1 Peregrine Semiconductor Develops RF Switch for CATV Applications
      • 4.1.2 NXP Launches Plastic Packaged RF Power Transistors
      • 4.1.3 Murata Announces Front End Modules
      • 4.1.4 NXP Introduces Gen8 LDMOS Technology
      • 4.1.5 Avago Develops Multi-Channel, High-Speed Digital Isolator Family
      • 4.1.6 Freescale Announces Airfast LDMOS Products
      • 4.1.7 Cree Announces Family of 1200V SiC Schottky Diodes
    • 4.2 Other
      • 4.2.1 IBM Develops New Process Design Kits
      • 4.2.2 TowerJazz Collaborates with DARPA's on GRATE Program
      • 4.2.3 STMicroelectronics Makes 28nm CMOS Process Available
      • 4.2.4 AWR and LFoundry Announce 0.15µm RF CMOS Process Design Kit
      • 4.2.5 Renesas Electronics to Close Tokyo Device Division
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