Gallium Nitride Development Efforts Expanding
TriQuint, Mitsubishi Electric, Nitronex, RFMD and Cree among Companies Making Announcements
BOSTON, MA - March 13, 2012 As products using Gallium Nitride (GaN) technology continue to gain acceptance in military and commercial applications, development activities at microelectronics companies are accelerating. The Strategy Analytics GaAs and Compound Semiconductor Technologies Service (GaAs) viewpoint, “Compound Semiconductor Industry Review October-December 2011: Microelectronics,” captures product, technology, contract and financial announcements for companies such as RFMD, Skyworks Solutions, Fujitsu, ANADIGICS, Agilent, Hittite Microwave, TriQuint Semiconductor, Avago, NXP Semiconductors, Microsemi, Renesas Electronics, Freescale, Broadcom Cree and Murata Manufacturing.
“GaN-based products have demonstrated performance advantages for military systems for some time and they are finally beginning to see acceptance in commercial applications, such as CATV and wireless infrastructure,” noted Eric Higham, Director of the Strategy Analytics GaAs and Compound Semiconductor Technologies Service. “As these application areas broaden, the industry is responding by increasing their efforts to develop new products, processes and partnerships.”
Asif Anwar, Director, Strategy Analytics Strategic Technologies Practice, added, “Recent announcements indicate growing interest in GaN-on-silicon processing to reduce cost and higher voltage GaN processes, which will improve power handling performance.”
This viewpoint summarizes financial, product, contract and employment developments from leading compound semiconductor device suppliers in Q4 2011. These announcements address a variety of commercial and military applications that use gallium arsenide (GaAs), gallium nitride (GaN), Silicon carbide (SiC), silicon germanium (SiGe) and complementary metal-oxide-semiconductor (CMOS) technologies.
Press release contact
+1 617 614 0721
© 2013 Strategy Analytics