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GaAs & Compound Semiconductor Technologies
Topics
  • RF and microwave
  • Millimeter wave
  • Fiber optic analog
  • Optoelectronics
  • Bulk and epitaxial substrates, materials and equipment
  • GaAs MMIC, discrete and digital IC devices
  • LEDs, laser diodes, photovoltaics
  • Si, SiGe, GaN, SiC, InP
  • Wireless, broadband, consumer and military markets


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  • Market Opportunities


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  • Regional Forecast
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Strategy Analytics

Compound Semiconductor Industry Review October-December 2011: Microelectronics

Author: Eric Higham

Publication Date: Feb 23 2012

Pages: 32

Report Type: Report, Word


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Summary

The October - December quarter of 2011 saw mostly positive revenue reports from microelectronic companies, with Skyworks cementing its position as the leading GaAs device manufacturer. Companies continue to diversify through reorganization, partnerships and product development aimed at adjacent and high performance market applications. GaN development activity continues strongly with several foundry and product announcements.

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Table of Contents

  • 1 Executive Summary
  • 2 Introduction
  • 3 MMICs
    • 3.1 Company Results
      • 3.1.1 RFMD Reports Q2'12 Results
      • 3.1.2 ANADIGICS Reports Q3 FY2011 Financials
      • 3.1.3 Fujitsu Reports Q2 FY2011 Financials
      • 3.1.4 TriQuint Reports Q3'11 Results
      • 3.1.5 Northrop Grumman Reports Q3 FY2011 Financials
      • 3.1.6 Teledyne Reports Q3'11 Financials
      • 3.1.7 Sumitomo Electric Reports H1 FY2011
      • 3.1.8 Renesas Electronics Reports Q2 FY2012 Financials
      • 3.1.9 Skyworks Reports Q4 and FY2011 Financial Results
      • 3.1.10 Agilent Reports Q4 and FY2011 Results
      • 3.1.11 Avago Technologies Reports Q4 and FY2011 Results
    • 3.2 Contracts
      • 3.2.1 Skyworks Powers Samsung's Next Generation Galaxy Smart Phones
      • 3.2.2 TriQuint Semiconductor Supports ZTE's Next Generation Smartphones
      • 3.2.3 Skyworks Ships Analog Control ICs to Siemens Healthcare
      • 3.2.4 Northrop and TriQuint Receive DARPA Contract
    • 3.3 New Products
      • 3.3.1 Hittite Releases 13 GHz Frequency Divider
      • 3.3.2 Hittite Extends Mux and Demux Product Line
      • 3.3.3 M/A-COM Tech Introduces S-Band Digital Phase Shifter
      • 3.3.4 M/A-COM Tech Unveils Map and Positioning Engine Module with NAVTEQ
      • 3.3.5 Hittite Releases Direct Conversion Receiver
      • 3.3.6 Hittite Announces Time Delay/Phase Shifter
      • 3.3.7 M/A-COM Tech Introduces High Power SPDT
      • 3.3.8 Hittite Microwave Introduces Millimeter Wave Triple Balanced Mixer
      • 3.3.9 Hittite Microwave Participates in WiGigTM Plugfest
      • 3.3.10 Nitronex Develops Multi-Stage GaN MMIC
      • 3.3.11 Hittite Microwave Releases 1:9 Fanout Buffer
      • 3.3.12 M/A-COM Tech Introduces CATV / Broadband Transformer Designer's Kit
      • 3.3.13 AtlanTecRF Introduces MIL-STD-883 Screened X-Band Amplifier
      • 3.3.14 RFMD Expands CATV Amplifier Portfolio
      • 3.3.15 Remtec Develops Flip Chip Packaging
      • 3.3.16 GigOptix Announces DC - 30 GHz GaAs MMIC Power Amplifier
      • 3.3.17 Nitronex Develops 48V GaN-on-Si Process Platform
      • 3.3.18 Murata Combines SAW Filter, PA and Magnetic Stabilizer Module
      • 3.3.19 Mitsubishi Electric Develops GaN HEMT C-Band Amplifiers
      • 3.3.20 ANADIGICS Introduces WiMAX/LTE Power Amplifier MMIC
      • 3.3.21 Hittite Releases 48-bit Delta-Sigma Modulator, Built-in Frequency Sweeper
      • 3.3.22 RFMD Introduces Single-Band RF FEM for 802.11b/g/n Wi-Fi Applications
      • 3.3.23 RFMD Introduces Switch Filter Modules
      • 3.3.24 RFMD Develops High Power Front End Modules
      • 3.3.25 GigOptix Introduces Surface Mountable Microwave Filters
      • 3.3.26 UMS Develops First GaN Power Transistor
    • 3.4 Other
      • 3.4.1 RF Micro Devices Forms Compound Semiconductor Group
      • 3.4.2 GaN Systems Closes First-Round Funding
      • 3.4.3 ANADIGICS Announces Resignation of COO/CFO
      • 3.4.4 Nitronex Announces GaN Partnership with GCS
      • 3.4.5 Skyworks and Advanced Analogic Technologies Amend Merger Agreement
      • 3.4.6 HRL Claim World's Fastest GaN Transistors
      • 3.4.7 Skyworks Opens Design Center in Korea
      • 3.4.8 Lenovo Honors RFMD with 2011 Best Supplier Award
    • 3.5 Patents
  • 4 Silicon Devices
    • 4.1 Company Results
      • 4.1.1 Freescale Reports Q3 FY2011 Results
      • 4.1.2 Broadcom Reports Q3'11 Results
      • 4.1.3 NXP Reports Q3 FY2011 Financials
      • 4.1.4 IXYS Reports Q2'11 Financials
      • 4.1.5 Microsemi Reports Q4 and FY2011 Results
      • 4.1.6 TowerJazz Reports Q3 FY2011 Financials
    • 4.2 New Products
      • 4.2.1 Cree Expands Z-Rec SiC Schottky Diode Offerings
      • 4.2.2 SemiSouth Announces Dual-Output Gate Driver Evaluation Board
      • 4.2.3 Asahi Kasei Microdevices Launches 1:10 Clock Fanout Buffer
      • 4.2.4 Microsemi Strengthens Rad-Hard Aerospace Portfolio
      • 4.2.5 Mitsubishi Electric Announces MOSFET for 2-way Radios
      • 4.2.6 Cree Release SiC Power Devices in Chip Form
      • 4.2.7 NXP Announces SiGe GPS LNAs
      • 4.2.8 NXP Announces Silicon TV Tuner
    • 4.3 Other
      • 4.3.1 OSRAM Opto Semiconductors Names New COO
      • 4.3.2 TowerJazz Expands High Speed SiGe, SOI and RF CMOS Design Kits
      • 4.3.3 IXYS and Clare Announce Optically Coupled Driver
      • 4.3.4 LAPIS Semiconductor Introduces Low-Power Microcontrollers
      • 4.3.5 Vitesse Ships Five Millionth Transimpedance Amplifiers
      • 4.3.6 European Researchers Demonstrate 245/450 GHz SiGe:C HBT
      • 4.3.7 CISSOID Introduces Isolated Gate Driver
      • 4.3.8 SemiSouth SiC JFETs Help FUPET Achieve Record Output Power Density
      • 4.3.9 TowerJazz Signs MOU for Process Transfers and Projects in India and Brazil
      • 4.3.10 IBM Demonstrates Graphene Chip at 2 GHz
      • 4.3.11 Cree Licenses Doherty Amplifier Patents to RFHIC
      • 4.3.12 Freescale Realigns Product Groups
      • 4.3.13 Global Semiconductor Alliance Releases Process Control Tool
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